Abstract:
2D quantum materials have recently gained significant popularity in the field of research, owing to the continuous discovery of numerous novel phenomena over the years. In this presentation, I will be sharing the phenomena that we have uncovered in the past decade. This encompasses not only quantum tunneling behavior but also the development of transistors based on innovative mechanisms. For example, in both the stacking of transition metal dichalcogenides (TMD) [1] and the lateral growth of two types of TMD materials [2], we have observed resonant tunneling behavior involving discrete quantum states. Leveraging this tunneling mechanism, we have achieved high-frequency operation (up to 64GHz) in graphene-based hot electron transistors [3]. Furthermore, based on theoretical simulations, we have predicted that negative differential resistance can be influenced by defects in monolayer 2D materials. Accordingly, we have experimentally validated this theoretical prediction in monolayer MoS2 and clay graphite through simple fabrication processes, controlling the appropriate number of defects [4-5]. If time allowed, new results [6] also will be presented in this talk.