Abstract:
Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) has emerged as a promising candidate for next-generation non-volatile memory technology. However, its efficacy has been largely limited by its requirement of an in-plane bias field if the MRAM free layer is perpendicularly magnetized. This presentation aims to shed light on the significance of interlayer chiral Dzyaloshinskii-Moriya interaction (i-DMI), one type of asymmetric exchange coupling, in enabling efficient and reliable operation of field-free SOT-MRAM devices [1]. I will also show that by further thin film heterostructure engineering, the direction and the magnitude of the interlayer DMI D vector can be controllably tuned and optimized [2]. Lastly, I will address some remaining challenges that need solving for wafer-scale integration of such i-DMI field-free SOT devices.